IPP60R230P6XKSA1
MOSFET N-CH 600V 16.8A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IPP60R230P6XKSA1, an N-Channel Power MOSFET from the CoolMOS™ P6 series. This through-hole component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 16.8A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 230mOhm at 6.4A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 31 nC at 10V and an input capacitance (Ciss) of 1450 pF at 100V. With a maximum power dissipation of 126W (Tc), this MOSFET is suitable for demanding applications in power supplies and industrial motor control. The PG-TO220-3 package facilitates robust thermal management.
Additional Information
Series: CoolMOS™ P6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 6.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 126W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 530µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 100 V |
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