IPP60R210CFD7XKSA1
MOSFET N CHManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ CFD7 series N-channel power MOSFET, part number IPP60R210CFD7XKSA1. This 600V device features a maximum continuous drain current of 12A (Tc) and a maximum power dissipation of 64W (Tc). With a low on-resistance of 210mOhm at 4.9A and 10V Vgs, it offers excellent conduction efficiency. The device exhibits a typical gate charge of 23 nC at 10V and input capacitance of 1015 pF at 400V, facilitating efficient switching performance. Packaged in a PG-TO220-3 through-hole configuration, it operates across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in power factor correction, switched-mode power supplies, and solar inverters.
Additional Information
Series: CoolMOS™ CFD7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 4.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 64W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 240µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1015 pF @ 400 V |
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