IPP60R1K4C6XKSA1
MOSFET N-CH 600V 3.2A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPP60R1K4C6XKSA1 is a 600 V N-Channel Power MOSFET. This device features a maximum continuous drain current of 3.2 A at 25°C and a drain-to-source breakdown voltage of 600 V. The on-resistance (Rds On) is specified at 1.4 Ohm maximum at 1.1 A and 10 V gate-source voltage. With a maximum power dissipation of 28.4 W at 25°C (TC), the IPP60R1K4C6XKSA1 is suitable for applications requiring high voltage and efficiency. Key parameters include a gate charge of 1.1 nC at 10 V and an input capacitance of 200 pF maximum at 100 V. The device is housed in a PG-TO220-3 package for through-hole mounting and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in power supply units, server power, and industrial applications.
Additional Information
Series: CoolMOS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28.4W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 100 V |