IPP60R190E6XKSA1
MOSFET N-CH 600V 20.2A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPP60R190E6XKSA1. This TO-220-3 packaged device offers a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 20.2A at 25°C (Tc). With a maximum on-resistance (Rds On) of 190mOhm at 9.5A and 10V Vgs, it features a typical gate charge (Qg) of 63 nC at 10V and an input capacitance (Ciss) of 1400 pF at 100V. The maximum power dissipation is 151W (Tc). This component is suitable for high-voltage power conversion applications across industries such as industrial power supplies, server power, and solar inverters. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 151W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 630µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 100 V |
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