IPP60R190C6XKSA1
MOSFET N-CH 600V 20.2A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' CoolMOS™ IPP60R190C6XKSA1 is an N-channel power MOSFET designed for high-efficiency power conversion applications. This component features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 20.2A at 25°C (Tc). With a maximum on-resistance (Rds On) of 190mOhm at 9.5A and 10V, it offers low conduction losses. The device boasts a transconductance (Gm) of 26 S (typical) and a gate charge (Qg) of 63 nC at 10V, facilitating fast switching speeds. Its input capacitance (Ciss) is rated at 1400 pF at 100V. The IPP60R190C6XKSA1 has a maximum power dissipation of 151W (Tc) and operates across a wide temperature range of -55°C to 150°C (TJ). Packaged in a PG-TO220-3 through-hole configuration, this MOSFET is suitable for use in server power supplies, industrial power systems, and solar inverters.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 151W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 630µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 100 V |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
