IPP60R165CPXKSA1
MOSFET N-CH 600V 21A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPP60R165CPXKSA1 is a 600 V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a continuous drain current of 21 A at 25°C (Tc) and a maximum power dissipation of 192 W (Tc). The Rds(on) is specified at 165 mOhm maximum for an Id of 12 A and Vgs of 10 V. Key parameters include a gate charge (Qg) of 52 nC (max) at 10 V and input capacitance (Ciss) of 2000 pF (max) at 100 V. The device operates across a temperature range of -55°C to 150°C (TJ). The IPP60R165CPXKSA1 is housed in a PG-TO220-3 package suitable for through-hole mounting. This MOSFET is utilized in industries such as power supplies, industrial automation, and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 790µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V |