IPP60R160C6XKSA1
MOSFET N-CH 600V 23.8A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPP60R160C6XKSA1 is a 600V N-channel power MOSFET designed for high-efficiency power conversion applications. Featuring a maximum continuous drain current of 23.8A (Tc) and a low on-resistance of 160mOhm at 11.3A, 10V, this device offers excellent conduction and switching performance. The IPP60R160C6XKSA1 boasts a static drain-source on-resistance (Rds(on)) of 160mOhm. Its maximum power dissipation is 176W (Tc), and it operates within a temperature range of -55°C to 150°C (TJ). Key electrical parameters include a gate charge (Qg) of 75 nC @ 10 V and input capacitance (Ciss) of 1660 pF @ 100 V. The MOSFET is housed in a PG-TO220-3 package suitable for through-hole mounting. This component is suitable for use in power supplies, motor drives, and lighting applications.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 11.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 176W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 750µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1660 pF @ 100 V |