IPP60R125C6XKSA1
MOSFET N-CH 600V 30A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPP60R125C6XKSA1 is an N-channel power MOSFET designed for high-voltage applications. This component features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 30A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 125mOhm at 14.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 96 nC (max) at 10V and an input capacitance (Ciss) of 2127 pF (max) at 100V. With a maximum power dissipation of 219W (Tc), this MOSFET is suitable for through-hole mounting in a PG-TO220-3 package. The operating temperature range is -55°C to 150°C (TJ). This component is utilized in industries such as power supplies, solar inverters, and industrial motor control.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 219W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 960µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2127 pF @ 100 V |
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