IPP60R099CPXKSA1
MOSFET N-CH 650V 31A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPP60R099CPXKSA1 is a 650V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features an
Rds(on) of 99mOhm at 18A and 10V, with a continuous drain current of 31A at 25°C. The device supports a gate-source voltage range of ±20V and has a typical gate charge of 80 nC at 10V. With a maximum power dissipation of 255W (Tc), it is suitable for demanding environments operating between -55°C and 150°C. The IPP60R099CPXKSA1 is packaged in a PG-TO220-3 through-hole configuration. This MOSFET is commonly utilized in server power supplies, industrial power systems, and solar inverters.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 255W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 100 V |
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