IPP60R074C6XKSA1
MOSFET N-CH 600V 57.7A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ IPP60R074C6XKSA1 is a 600V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a maximum continuous drain current of 57.7A at 25°C (Tc) and a low Rds(on) of 74mOhm at 21A, 10V. The IPP60R074C6XKSA1 offers a maximum power dissipation of 480.8W (Tc) and a gate charge of 138 nC at 10V. With an input capacitance of 3020 pF at 100V, it is suitable for applications in server power supplies, industrial power systems, and renewable energy inverters. The device is packaged in a TO-220-3 (PG-TO220-3) package, allowing for through-hole mounting and a wide operating temperature range of -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480.8W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.4mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 138 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3020 pF @ 100 V |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
