IPP50R520CPXKSA1
MOSFET N-CH 500V 7.1A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPP50R520CPXKSA1, is a high-performance discrete semiconductor designed for demanding power conversion applications. This TO-220-3 packaged device features a 500 V drain-source voltage (Vdss) and a continuous drain current (Id) of 7.1 A at 25°C (Tc), with a maximum power dissipation of 66 W (Tc). The MOSFET exhibits a low on-resistance (Rds On) of 520 mOhm at 3.8 A and 10 V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 17 nC at 10 V and an input capacitance (Ciss) of 680 pF at 100 V. Operating across a temperature range of -55°C to 150°C (TJ), this component is suitable for use in power supplies, motor control, and lighting systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 100 V |
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