IPP50R520CPHKSA1
MOSFET N-CH 550V 7.1A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ IPP50R520CPHKSA1 is an N-channel Power MOSFET designed for high-efficiency power conversion applications. This component features a drain-source voltage (Vdss) of 550V and a continuous drain current (Id) of 7.1A at 25°C (Tc), with a maximum power dissipation of 66W (Tc). The device offers a low on-resistance (Rds On) of 520mOhm at 3.8A and 10V, and a gate charge (Qg) of 17nC at 10V. Its input capacitance (Ciss) is a maximum of 680pF at 100V, and it operates within a junction temperature range of -55°C to 150°C. The IPP50R520CPHKSA1 is provided in a PG-TO220-3-1 package suitable for through-hole mounting. This MOSFET is commonly utilized in switched-mode power supplies, power factor correction circuits, and industrial power applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 100 V |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
