IPP50R399CPXKSA1
MOSFET N-CH 500V 9A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPP50R399CPXKSA1, offers a 500V drain-source voltage and 9A continuous drain current at 25°C (Ta). This through-hole component features a low on-resistance of 399mOhm maximum at 4.9A and 10V gate-source voltage, with a gate charge of 4 nC maximum at 10V. The input capacitance (Ciss) is 890 pF maximum at 100V. Designed for high-efficiency power conversion, this device is suitable for applications in power supplies, industrial automation, and renewable energy systems. The PG-TO220-3 package facilitates robust thermal management, with a maximum power dissipation of 83W at 25°C (Tc). Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 399mOhm @ 4.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 330µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 100 V |
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