IPP50R350CPXKSA1
MOSFET N-CH 550V 10A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel MOSFET, part number IPP50R350CPXKSA1, offers a robust solution for demanding power applications. This device features a 550V drain-source voltage and a continuous drain current capability of 10A at 25°C (Tc), with a maximum power dissipation of 89W (Tc). The N-Channel MOSFET technology, with its 350mOhm maximum on-resistance at 5.6A and 10V Vgs, ensures efficient power transfer. Key parameters include a gate charge of 25 nC at 10V and an input capacitance of 1020 pF at 100V. Designed for through-hole mounting in a PG-TO220-3-1 package, it operates across a wide temperature range of -55°C to 150°C (TJ). This component is suitable for use in industries such as industrial power supplies, server power, and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 370µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 100 V |
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