IPP50R250CPHKSA1
MOSFET N-CH 500V 13A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, IPP50R250CPHKSA1, offers a 500 V drain-source breakdown voltage and 13 A continuous drain current at 25°C. This through-hole component, housed in a PG-TO220-3-1 package, features a maximum power dissipation of 114 W. Key electrical parameters include a low Rds(on) of 250 mOhm at 7.8 A and 10 V, a gate charge of 36 nC at 10 V, and an input capacitance of 1420 pF at 100 V. The operating temperature range is from -55°C to 150°C. This device is suitable for applications in power supply units, industrial power systems, and renewable energy converters.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 520µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1420 pF @ 100 V |
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