IPP50R199CPXKSA1
MOSFET N-CH 550V 17A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPP50R199CPXKSA1 is an N-channel power MOSFET designed for high-efficiency power conversion applications. This component features a 550V drain-source voltage and a continuous drain current capability of 17A at a case temperature of 25°C. The IPP50R199CPXKSA1 offers a low on-resistance (Rds On) of 199mOhm at 9.9A and 10V gate-source voltage, contributing to reduced conduction losses. With a maximum power dissipation of 139W (Tc) and a maximum junction temperature of 150°C, it ensures robust operation in demanding environments. Key parameters include a gate charge of 45 nC at 10V and an input capacitance (Ciss) of 1800 pF at 100V. The device is packaged in a PG-TO220-3-1 through-hole package, suitable for a wide range of industrial power supplies, server power, and solar inverters.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 199mOhm @ 9.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 139W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 660µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 100 V |
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