IPP50R140CPXKSA1
MOSFET N-CH 550V 23A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPP50R140CPXKSA1, is a high-performance discrete semiconductor device designed for demanding applications. This MOSFET features a drain-source voltage (Vdss) of 550 V and a continuous drain current (Id) of 23 A at 25°C, with a maximum power dissipation of 192 W. The device exhibits a low on-resistance (Rds On) of 140 mOhm at 14 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 64 nC and input capacitance (Ciss) of 2540 pF at 100 V. The IPP50R140CPXKSA1 is housed in a standard PG-TO220-3-1 package, facilitating through-hole mounting. This component is suitable for power supply units, industrial power conversion, and electric vehicle charging infrastructure.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 930µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2540 pF @ 100 V |
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