IPP50R140CPHKSA1
MOSFET N-CH 550V 23A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, IPP50R140CPHKSA1. This component features a 550V drain-source breakdown voltage and a continuous drain current rating of 23A at 25°C case temperature. The device exhibits a maximum on-resistance of 140mOhm at 14A and 10V gate-source voltage. Key parameters include a 64nC maximum gate charge and 2540pF input capacitance. Designed for through-hole mounting in a PG-TO220-3-1 package, it offers a maximum power dissipation of 192W at case temperature and operates within a junction temperature range of -55°C to 150°C. This MOSFET is suitable for applications in power factor correction, uninterruptible power supplies, and server power supplies.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 930µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2540 pF @ 100 V |
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