IPP50N12S3L15AKSA1
MOSFET N-CHANNEL_100+Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP50N12S3L15AKSA1 is a high-performance N-channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 120V and a continuous drain current (Id) capability of 50A at 25°C (Tc). With a maximum power dissipation of 100W (Tc) and a low on-resistance (Rds On) of 15.7mOhm at 50A and 10V, it offers efficient power handling. The MOSFET is qualified to AEC-Q101 and manufactured using advanced MOSFET technology. Key parameters include a gate charge (Qg) of 57 nC at 10V and input capacitance (Ciss) of 4180 pF at 25V. The IPP50N12S3L15AKSA1 utilizes a PG-TO220-3-1 package for through-hole mounting and operates across a wide temperature range of -55°C to 175°C (TJ). This device is suitable for automotive and industrial power conversion systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 60µA |
| Supplier Device Package | PG-TO220-3-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4180 pF @ 25 V |
| Qualification | AEC-Q101 |
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