IPP50N10S3L16AKSA1
MOSFET N-CH 100V 50A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP50N10S3L16AKSA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a drain-source voltage of 100 V and a continuous drain current capability of 50 A at 25°C (Tc). With a maximum Rds(on) of 15.7 mOhm at 50 A and 10 V, it offers low conduction losses. The MOSFET is housed in a PG-TO220-3-1 package, facilitating through-hole mounting. Key parameters include a gate charge of 64 nC (max) at 10 V and an input capacitance of 4180 pF (max) at 25 V. The IPP50N10S3L16AKSA1 supports a wide operating temperature range from -55°C to 175°C (TJ) and has a maximum power dissipation of 100 W (Tc). This component is suitable for industrial automation, electric vehicle charging, and power supply designs.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 60µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4180 pF @ 25 V |
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