IPP50CN10NGXKSA1
MOSFET N-CH 100V 20A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPP50CN10NGXKSA1 is an N-Channel Power MOSFET with a 100V drain-source voltage. It offers a continuous drain current of 20A at 25°C (Tc) and a maximum power dissipation of 44W (Tc). The device features a low on-resistance of 50mOhm at 20A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 16nC @ 10V and input capacitance (Ciss) of 1090pF @ 50V. The IPP50CN10NGXKSA1 is packaged in a PG-TO220-3, suitable for through-hole mounting, and operates across a temperature range of -55°C to 175°C (TJ). This component is utilized in various applications within the automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 44W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1090 pF @ 50 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
