IPP47N10SL26AKSA1
MOSFET N-CH 100V 47A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel Power MOSFET, part number IPP47N10SL26AKSA1, offers a robust solution for high-current applications. This TO-220-3 packaged device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 47A at 25°C (Tc). With a maximum on-resistance (Rds On) of 26mOhm at 33A and 10V, it ensures efficient power transfer. The device boasts a high continuous drain current capability of 47A (Tc) and a maximum power dissipation of 175W (Tc), supporting demanding thermal environments. Key parameters include a gate charge (Qg) of 135 nC at 10V and input capacitance (Ciss) of 2500 pF at 25V. Operating across a wide temperature range of -55°C to 175°C (TJ), this through-hole mounted MOSFET is suitable for automotive and industrial power switching applications.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 2mA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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