IPP47N10S33AKSA1
MOSFET N-CH 100V 47A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel Power MOSFET, part number IPP47N10S33AKSA1, offers a 100V Drain-to-Source Voltage (Vds) and a continuous drain current of 47A at 25°C. This through-hole component features a low on-resistance of 33mOhm at 33A and 10V Vgs, with a maximum gate charge (Qg) of 105 nC at 10V. The device boasts a maximum power dissipation of 175W (Tc) and an operating temperature range of -55°C to 175°C (TJ). Its input capacitance (Ciss) is 2500 pF at 25V. Supplied in a PG-TO220-3-1 package, this MOSFET is suitable for applications in industrial and automotive sectors.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2mA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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