IPP45P03P4L11AKSA1
MOSFET P-CH 30V 45A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP45P03P4L11AKSA1 is a P-channel Power MOSFET designed for high-performance switching applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 45A at 25°C (Tc). With a low on-resistance of 11.1mOhm at 45A and 10V Vgs, it minimizes conduction losses, making it suitable for power conversion and motor control systems. The MOSFET offers a maximum power dissipation of 58W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). The PG-TO220-3-1 package facilitates robust thermal management in through-hole mounting configurations. Key parameters include a gate charge (Qg) of 55 nC at 10V Vgs and input capacitance (Ciss) of 3770 pF at 25V Vds. This component finds application in automotive, industrial, and consumer electronics sectors requiring efficient power management.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.1mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 85µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +5V, -16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3770 pF @ 25 V |
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