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IPP45N06S4L08AKSA2

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IPP45N06S4L08AKSA2

MOSFET N-CH 60V 45A TO220-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ series N-channel power MOSFET, part number IPP45N06S4L08AKSA2. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 45A at 25°C. The low on-resistance (Rds On) of 8.2mOhm at 45A and 10V Vgs, coupled with a maximum gate charge (Qg) of 64 nC at 10V, ensures efficient switching performance. Designed for automotive applications, this AEC-Q101 qualified component is housed in a PG-TO220-3-1 package with a through-hole mounting type. Maximum power dissipation is 71W (Tc) and it operates across a wide temperature range of -55°C to 175°C (TJ). Key parameters include a threshold voltage (Vgs(th)) of 2.2V at 35µA and a maximum gate-source voltage (Vgs(max)) of ±16V. This component is suitable for high-power switching applications in the automotive sector.

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Rds On (Max) @ Id, Vgs8.2mOhm @ 45A, 10V
FET Feature-
Power Dissipation (Max)71W (Tc)
Vgs(th) (Max) @ Id2.2V @ 35µA
Supplier Device PackagePG-TO220-3-1
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4780 pF @ 25 V
QualificationAEC-Q101

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