IPP45N06S4L08AKSA1
MOSFET N-CH 60V 45A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP45N06S4L08AKSA1 is an N-channel power MOSFET designed for high-performance applications. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 45A at 25°C (Tc). Its low on-resistance (Rds On) of 8.2mOhm is achieved at 45A and 10V Vgs. The transistor exhibits a maximum power dissipation of 71W (Tc) and a gate charge (Qg) of 64 nC at 10V Vgs. Input capacitance (Ciss) is specified at a maximum of 4780 pF at 25V Vds. The IPP45N06S4L08AKSA1 utilizes through-hole mounting in a PG-TO220-3-1 package, suitable for various industrial and automotive power management systems. Operating temperature range is from -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 35µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4780 pF @ 25 V |