IPP45N06S3L-13
MOSFET N-CH 55V 45A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP45N06S3L-13 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 45A at 25°C (Tc). The low on-resistance (Rds On) of 13.4mOhm at 26A and 10V (Vgs) ensures minimal conduction losses. With a Gate Charge (Qg) of 75 nC (max) at 10V and an Input Capacitance (Ciss) of 3600 pF (max) at 25V, it facilitates efficient switching performance. The device operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a PG-TO220-3-1 through-hole configuration, it offers a maximum power dissipation of 65W (Tc). This MOSFET is suitable for use in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.4mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 30µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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