IPP35CN10N G
MOSFET N-CH 100V 27A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP35CN10N-G is an N-Channel Power MOSFET with a drain-source voltage of 100 V. This through-hole component, packaged in a PG-TO220-3, offers a continuous drain current of 27 A at 25°C and a maximum power dissipation of 58 W. Key electrical characteristics include a maximum Rds(on) of 35 mOhm at 27 A and 10 V, and a gate charge of 24 nC at 10 V. With a junction temperature range of -55°C to 175°C, this MOSFET is suitable for applications in automotive and industrial power systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 27A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 29µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 50 V |
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