IPP25N06S3L-22
MOSFET N-CH 55V 25A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP25N06S3L-22 is an N-channel Power MOSFET designed for robust performance. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 25A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 21.6mOhm at 17A and 10V gate-source voltage. With a maximum power dissipation of 50W (Tc), it is suitable for demanding applications. The gate charge (Qg) is 47 nC at 10V, and input capacitance (Ciss) is 2260 pF at 25V. Manufactured using advanced MOSFET technology, this component is housed in a PG-TO220-3-1 package, facilitating through-hole mounting. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET finds application in various industrial sectors, including automotive and power supply designs.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 21.6mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 20µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2260 pF @ 25 V |
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