IPP25N06S325XK
MOSFET N-CH 55V 25A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series N-channel power MOSFET, part number IPP25N06S325XK. This device features a 55V drain-source voltage and a continuous drain current of 25A at 25°C (Tc). The Rds(on) is specified at a maximum of 25.1mOhm at 15A and 10V Vgs. Key electrical characteristics include a gate charge of 41 nC (max) at 10V and input capacitance of 1862 pF (max) at 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 48W (Tc). It is housed in a PG-TO220-3-1 package suitable for through-hole mounting. This component is commonly utilized in automotive and industrial power supply applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 25.1mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1862 pF @ 25 V |
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