IPP220N25NFDAKSA1
MOSFET N-CH 250V 61A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP220N25NFDAKSA1 is an N-channel power MOSFET designed for high-efficiency applications. This component features a 250V drain-source voltage (Vds) and a continuous drain current (Id) of 61A at 25°C, with a maximum power dissipation of 300W (Tc). The low on-resistance (Rds On) of 22mOhm is achieved at 61A and 10V gate-source voltage (Vgs). Key characteristics include a gate charge (Qg) of 86nC (Max) @ 10V and input capacitance (Ciss) of 7076pF (Max) @ 125V. It operates within a temperature range of -55°C to 175°C (TJ) and is housed in a PG-TO220-3 package for through-hole mounting. This device is suitable for use in power supply, motor control, and industrial applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 61A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7076 pF @ 125 V |
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