IPP16CN10NGXKSA1
MOSFET N-CH 100V 53A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPP16CN10NGXKSA1, offers a 100V drain-source voltage and a continuous drain current of 53A at 25°C (Tc). This through-hole component features a low on-resistance of 16.5mOhm at 53A and 10V, with a maximum power dissipation of 100W (Tc). The device has a gate charge of 48nC at 10V and an input capacitance of 3220pF. Operating temperature range is -55°C to 175°C (TJ). The PG-TO220-3 package is suitable for applications in industrial power supplies, automotive systems, and motor control.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 53A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 61µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 50 V |
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