IPP14N03LA
MOSFET N-CH 25V 30A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP14N03LA is an N-channel power MOSFET designed for high-efficiency switching applications. This device features a Drain-to-Source Voltage (Vdss) of 25V and a continuous Drain current (Id) of 30A at 25°C (Tc). With a maximum Power Dissipation of 46W (Tc), it offers a low On-Resistance (Rds On) of 13.9mOhm at 30A and 10V. The MOSFET utilizes Metal Oxide technology and is packaged in a standard PG-TO220-3 with through-hole mounting. Key parameters include a Gate Charge (Qg) of 8.3 nC at 5V and Input Capacitance (Ciss) of 1043 pF at 15V. Operating temperature ranges from -55°C to 175°C (TJ), with drive voltages typically from 4.5V to 10V and a maximum Gate-to-Source voltage (Vgs) of ±20V. This component is commonly found in industrial power supplies, automotive systems, and motor control applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 46W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1043 pF @ 15 V |
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