IPP147N03L G
MOSFET N-CH 30V 20A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP147N03L-G is an N-Channel Power MOSFET designed for high-efficiency power management applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 20A at 25°C (Tc). With a low on-resistance of 14.7mOhm at 20A and 10V Vgs, it minimizes conduction losses. The device offers a low gate charge of 10 nC at 10V, facilitating faster switching speeds. It is packaged in a standard PG-TO220-3 through-hole configuration, suitable for demanding thermal management. The operating temperature range is from -55°C to 175°C (TJ). This MOSFET is utilized in various industries including automotive, industrial automation, and power supplies.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 15 V |
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