IPP13N03LB G
MOSFET N-CH 30V 30A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP13N03LB-G is a 30 V N-channel power MOSFET. This device features a maximum continuous drain current of 30 A (Tc) and a maximum power dissipation of 52 W (Tc). The low on-resistance is specified at 12.8 mOhm at 30 A and 10 V Vgs. Gate drive voltages range from 4.5 V to 10 V. Key parameters include a Ciss of 1355 pF (Max) at 15 V and a Qg of 10 nC (Max) at 5 V. The device operates across an extended temperature range of -55°C to 175°C (TJ). Packaged in a PG-TO220-3-1 (TO-220-3) through-hole configuration, this MOSFET is suitable for applications in automotive, industrial power, and consumer electronics.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1355 pF @ 15 V |
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