IPP139N08N3 G
MOSFET N-CH 80V 45A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPP139N08N3-G is an N-channel power MOSFET designed for high-performance applications. This component features a 80V drain-source voltage (Vdss) and a continuous drain current (Id) of 45A at 25°C, with a maximum power dissipation of 79W (Tc). The device exhibits a low on-resistance (Rds On) of 13.9mOhm at 45A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 25 nC at 10V and input capacitance (Ciss) of 1730 pF at 40V. The IPP139N08N3-G is housed in a PG-TO220-3 package for through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). Its robust specifications make it suitable for use in industrial power supplies, automotive systems, and motor control applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 33µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1730 pF @ 40 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
