IPP12CNE8N G
MOSFET N-CH 85V 67A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP12CNE8N-G is an N-channel power MOSFET designed for high-efficiency power conversion applications. This device features a Drain-Source Voltage (Vdss) of 85V and a continuous Drain current (Id) of 67A at 25°C, with a low on-resistance (Rds On) of 12.9mOhm at 67A and 10V. The maximum power dissipation is 125W (Tc). Key parameters include a Gate Charge (Qg) of 64 nC at 10V and an Input Capacitance (Ciss) of 4340 pF at 40V. Packaged in a PG-TO220-3 through-hole configuration, it operates across a wide temperature range of -55°C to 175°C. This component is utilized in industries such as automotive, industrial power supplies, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.9mOhm @ 67A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 83µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 40 V |
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