IPP12CN10LGXKSA1
MOSFET N-CH 100V 69A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP12CN10LGXKSA1 is an N-Channel Power MOSFET designed for high-performance applications. This component features a 100 V drain-source voltage (Vdss) and a continuous drain current of 69 A at 25°C (Tc), with a maximum power dissipation of 125 W (Tc). The Rds(on) is specified at a maximum of 12 mOhm at 69 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 58 nC (max) at 10 V and an input capacitance (Ciss) of 5600 pF (max) at 50 V. The device is housed in a PG-TO220-3 package for through-hole mounting and operates within a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for use in power supply, motor control, and automotive applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 69A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 69A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 83µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 50 V |
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