IPP126N10N3GXKSA1
MOSFET N-CH 100V 58A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP126N10N3GXKSA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion. This component offers a 100V drain-source voltage (Vdss) and a continuous drain current of 58A at 25°C (Tc), with a maximum power dissipation of 94W (Tc). Featuring a low Rds(on) of 12.3mOhm at 46A and 10V, it minimizes conduction losses. Key parameters include a gate charge (Qg) of 35nC at 10V and input capacitance (Ciss) of 2500pF at 50V. The device supports drive voltages from 6V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. Packaged in a TO-220-3 (PG-TO220-3) through-hole configuration, it operates across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for applications in automotive, industrial power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.3mOhm @ 46A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 46µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 50 V |
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