IPP120P04P4L03AKSA2
MOSFET P-CH 40V 120A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS®-P2 P-Channel Power MOSFET, part number IPP120P04P4L03AKSA2, features a 40V drain-source voltage and a continuous drain current of 120A at 25°C (Tc). This through-hole device, housed in a PG-TO220-3-1 package, offers a low Rds(on) of 3.4mOhm at 100A and 10V. With maximum power dissipation of 136W (Tc) and a wide operating temperature range of -55°C to 175°C (TJ), it is suitable for demanding applications. Key electrical parameters include a gate charge of 234 nC (max) at 10V and input capacitance of 15000 pF (max) at 25V. This component finds application in automotive, industrial power, and power management systems.
Additional Information
Series: OptiMOS®-P2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 340µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +5V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 234 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15000 pF @ 25 V |
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