IPP120P04P404AKSA1
MOSFET P-CH 40V 120A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ P-Channel MOSFET, part number IPP120P04P404AKSA1, features a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 120A at 25°C. This device offers a maximum on-resistance (Rds On) of 3.8mOhm at 100A and 10V gate-source voltage (Vgs). With a gate charge (Qg) of 205nC at 10V, the IPP120P04P404AKSA1 is designed for efficient power switching applications. Its high power dissipation capability of 136W (Tc) and a wide operating temperature range of -55°C to 175°C make it suitable for demanding environments. The component is packaged in a TO-220-3 format, facilitating through-hole mounting. This AEC-Q101 qualified MOSFET is primarily utilized in automotive applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 340µA |
| Supplier Device Package | PG-TO220-3-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 205 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14790 pF @ 25 V |
| Qualification | AEC-Q101 |
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