IPP120N20NFDAKSA1
MOSFET N-CH 200V 84A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP120N20NFDAKSA1 is an N-channel Power MOSFET with a 200 V drain-source voltage. This component offers a continuous drain current of 84 A at 25°C and a maximum power dissipation of 300 W (Tc). Key electrical characteristics include a low on-resistance of 12 mOhm at 84 A and 10 V, and a gate charge of 87 nC at 10 V. Input capacitance (Ciss) is specified at 6650 pF at 100 V. The device features a 10 V drive voltage for optimal Rds(on) performance and a ±20 V gate-source voltage limit. The threshold voltage (Vgs(th)) is 4 V at 270 µA. This MOSFET is housed in a TO-220-3 package (PG-TO220-3) for through-hole mounting and is rated for an operating temperature range of -55°C to 175°C (TJ). Applications include power management in automotive and industrial systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 84A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6650 pF @ 100 V |
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