IPP120N10S405AKSA1
MOSFET N-CH 100V 120A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP120N10S405AKSA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion. This component features a 100V drain-source voltage rating and a continuous drain current capability of 120A at 25°C, with a maximum power dissipation of 190W. The device exhibits a low on-resistance of 5.3mOhm at 100A and 10V gate-source voltage, facilitated by its advanced OptiMOS™ technology.
Key electrical parameters include a gate charge (Qg) of 91 nC at 10V and input capacitance (Ciss) of 6540 pF at 25V. The IPP120N10S405AKSA1 operates within a temperature range of -55°C to 175°C and is qualified to AEC-Q101 standards, making it suitable for demanding automotive applications. Its PG-TO220-3-1 package with through-hole mounting ensures robust thermal performance and ease of integration in power supply designs, electric vehicle powertrains, and industrial motor control systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 120µA |
| Supplier Device Package | PG-TO220-3-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6540 pF @ 25 V |
| Qualification | AEC-Q101 |
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