IPP120N10S403AKSA1
MOSFET N-CH 100V 120A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP120N10S403AKSA1 is an N-channel power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 120A at 25°C (Tc), with a maximum power dissipation of 250W (Tc). The device boasts a low on-resistance (Rds On) of 3.9mOhm at 100A and 10V, facilitated by a 10V gate drive. Key parameters include a gate charge (Qg) of 140 nC at 10V and input capacitance (Ciss) of 10120 pF at 25V. The IPP120N10S403AKSA1 utilizes MOSFET technology and is housed in a PG-TO220-3-1 package suitable for through-hole mounting. This component is qualified to AEC-Q101, making it suitable for automotive applications, as well as industrial power supplies and motor control systems. It operates across a temperature range of -55°C to 175°C (TJ) and has a maximum gate-source voltage of ±20V.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 180µA |
| Supplier Device Package | PG-TO220-3-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10120 pF @ 25 V |
| Qualification | AEC-Q101 |
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