IPP120N06S4H1AKSA1
MOSFET N-CH 60V 120A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPP120N06S4H1AKSA1, offers a 60V drain-source voltage and a continuous drain current of 120A at 25°C (Tc). This device features a low on-resistance of 2.4mOhm maximum at 100A and 10V, with a gate charge of 270 nC at 10V. The MOSFET is housed in a PG-TO220-3-1 package and supports through-hole mounting. It is rated for a maximum power dissipation of 250W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). This component is suitable for applications in automotive, industrial power control, and power supply designs demanding high current handling and efficiency.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 21900 pF @ 25 V |
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