IPP120N06S403AKSA1
MOSFET N-CH 60V 120A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP120N06S403AKSA1 is an N-Channel Power MOSFET designed for high-current applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 120A at 25°C (Tc). The low on-resistance (Rds On) of 3.2mOhm at 100A and 10V gate-source voltage (Vgs) ensures efficient power transfer with minimal losses. With a maximum power dissipation of 167W (Tc), it is suitable for demanding thermal environments. The device offers a gate charge (Qg) of 160nC at 10V and an input capacitance (Ciss) of 13150pF at 25V. Packaged in a PG-TO220-3-1 through-hole configuration, it operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is utilized in various industries including automotive, industrial power supplies, and motor control systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 120µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13150 pF @ 25 V |
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