IPP120N06NGAKSA1
MOSFET N-CH 60V 75A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP120N06NGAKSA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 60V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 75A at 25°C (Tc). With a maximum power dissipation of 158W (Tc), it is suitable for demanding thermal environments. The low on-resistance of 12mOhm at 75A and 10V gate drive voltage (Vgs) minimizes conduction losses. Key parameters include a gate charge of 62 nC at 10V Vgs and an input capacitance (Ciss) of 2100 pF at 30V Vds. The device utilizes a PG-TO220-3-1 package with through-hole mounting. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is commonly employed in automotive, industrial power supply, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 94µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 30 V |
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