IPP120N04S401AKSA1
MOSFET N-CH 40V 120A TO220-3-1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPP120N04S401AKSA1, offers a 40V drain-source voltage rating and a continuous drain current capability of 120A at 25°C (Tc). This device features a low on-resistance of 1.9mOhm maximum at 100A and 10V, indicative of its high efficiency. With a maximum power dissipation of 188W (Tc), it is suitable for demanding applications. The gate charge is specified at 176 nC maximum at 10V, and input capacitance (Ciss) is 14000 pF maximum at 25V. Designed for through-hole mounting in a PG-TO220-3-1 package, this MOSFET operates within a temperature range of -55°C to 175°C (TJ). Its robust construction and performance characteristics make it a valuable component in automotive, industrial, and power supply applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 140µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 176 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14000 pF @ 25 V |