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IPP11N03LA

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IPP11N03LA

MOSFET N-CH 25V 30A TO220-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ IPP11N03LA is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 25 V and a continuous drain current (Id) of 30 A at 25°C (Tc), with a maximum power dissipation of 52 W (Tc). The device exhibits a low on-resistance (Rds On) of 11.5 mOhm at 30 A and 10 V, facilitated by a gate-source voltage (Vgs) range of 4.5V to 10V for optimal drive. With a typical gate charge (Qg) of 11 nC at 5 V and an input capacitance (Ciss) of 1358 pF at 15 V, it ensures efficient switching characteristics. The IPP11N03LA is housed in a PG-TO220-3-1 package, suitable for through-hole mounting, and operates across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial, and consumer electronics sectors requiring robust power management solutions.

Additional Information

Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs11.5mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)52W (Tc)
Vgs(th) (Max) @ Id2V @ 20µA
Supplier Device PackagePG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1358 pF @ 15 V

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