IPP110N20NAAKSA1
MOSFET N-CH 200V 88A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptimWatt™ IPP110N20NAAKSA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 200V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 88A at 25°C (Tc). With a low on-resistance (Rds On) of 10.7mOhm at 88A and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 300W (Tc) and a maximum junction temperature of 175°C, ensuring robust performance in demanding environments. Key parameters include a gate charge (Qg) of 87nC at 10V and input capacitance (Ciss) of 7100pF at 100V. The IPP110N20NAAKSA1 is housed in a PG-TO220-3 package for through-hole mounting and is suitable for use in power supplies, motor control, and renewable energy systems.
Additional Information
Series: OptimWatt™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.7mOhm @ 88A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7100 pF @ 100 V |
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